Femto Silicon and InGaAs Photoreceivers

  • FEMTO: Femtowatt Photoreceivers Series FWPR-20

    FEMTO: Femtowatt Photoreceivers Series FWPR-20

    The Femtoseries FWPR-20 photoreceivers combine low noise Si or InGaAs PIN photodiodes with a specially designed transimpedance amplifier with extremely high gain of up to 1012 V/A and very low noise. This unique combination results in a photoreceiver with Femtowatt sensitivity due to its exceptional low NEP of 0.7 fW/√Hz. Direct detection of optical powers down to ca. 50 fW is possible without the need for further averaging behind the receiver.

  • FEMTO: Picowatt Photoreceiver Series PWPR-2K

    FEMTO: Picowatt Photoreceiver Series PWPR-2K

    In addition to precise and fast cw-measurements the relatively large bandwidth from DC to 2 kHz also allows time-resolved and modulated measurements. Particularly the combination with lock-in amplifiers results in ultra-sensitive measurement systems being almost immune to disturbances from external sources. In this way the PWPR-2K can easily detect optical powers from about 100 fW up to 10 nW.

  • FEMTO: 400 kHz Photoreceiver Series LCA-S-400-K

    FEMTO: 400 kHz Photoreceiver Series LCA-S-400-K

    By combining state of the art photodiodes with the proven and outstanding FEMTO LCA Current Amplifier technology we designed a new family of photoreceivers with a remarkable performance. The FemtoLCA-S-400K is available with either a large area Si or InGaAs photodiode covering a spectral range from 400 to 1100 nm and 900 to 1700 nm, respectively. The amplifier transimpedance is 107 V/A resulting in a maximum conversion gain of 9.5 x 106 V/W at 1550 nm for the InGaAs model.

  • FEMTO: 200 MHz Photoreceiver Series HCA-S-200M

    FEMTO: 200 MHz Photoreceiver Series HCA-S-200M

    The Femtoseries HCA-S-200M photoreceivers combine fast photodiodes with the proven and outstanding FEMTO HCA current amplifier technology. The HCA-S-200M is available with either a Silicon or InGaAs photodiode covering a spectral range from 320 to 1000 nm and 900 to 1700 nm, respectively. The electrical amplifier gain is 2 x 104 V/A resulting in a maximum conversion gain of 1.9 x 104 V/W at 1550 nm for the InGaAs model. The sophisticated DC coupled multistage amplifier design allows measurements from DC to a maximum bandwidth of 200 MHz corresponding to a minimum rise time of 1.8 ns. With a noise equivalent power (NEP) as low as 5 pW/√Hz signals with an optical power in the micro Watt range can be detected without the need for further averaging.

  • FEMTO: 400 MHz Photoreceiver Series HCAS-S-400M

    FEMTO: 400 MHz Photoreceiver Series HCAS-S-400M

    The Femtoseries HCA-S-400M Photoreceivers combine fast photodiodes with the proven and outstanding FEMTO HCA current amplifier technology. The HCA-S-400M is available with either a fast Silicon or InGaAs photodiode covering a spectral range from 320 to 1000 nm and 900 to 1700 nm, respectively. The amplifier transimpedance is 5 x 103 V/A resulting in a maximum conversion gain of 4.8 x 103 V/W at 1550 nm for the InGaAs model, and 2.7 x 103 V/W at 800 nm for the model with Silicon photodiode. The sophisticated DC coupled multistage amplifier design allows measurements from DC to a maximum bandwidth of 400 MHz corresponding to a minimum rise time of 1 ns. Due to the low noise design signals with an optical power in the micro Watt range can be detected without the need for further averaging. Different models with free space or fiber-optic input are available.

  • FEMTO: Ultrafast Photoreceiver Series HSPR-X and HSA-X-S

    FEMTO: Ultrafast Photoreceiver Series HSPR-X and HSA-X-S

    By combining state of the art photodiodes with the proven and outstanding FEMTO GHz amplifier technology we designed a new family of photoreceivers with a remarkable performance. The FemtoHSPR-X and HSA-X-S offer an upper bandwidth limit of 2 GHz. Two models with either a fast Si-PIN or InGaAs-PIN photodiode cover a spectral range from 320 to 1000 nm and 900 to 1700 nm, respectively. Due to the sophisticated amplifier design the minimum NEP is just 11 pW/√Hz at a transimpedance of 5 x 103 V/A. This allows for the measurement of optical power levels in the µW range with GHz speed.

  • FEMTO: Variable Gain Photoreceiver - Fast Optical Power Meter Series OE-200

    FEMTO: Variable Gain Photoreceiver - Fast Optical Power Meter Series OE-200

    The FemtoOE-200 series of variable gain photoreceivers is designed for a great variety of applications requiring the fast and precise measurement of small optical signals. By combining a low noise transimpedance amplifier with a silicon or InGaAs photodiode a broad wavelength range from 190 nm up to 1700 nm is covered. The integrated amplifier offers adjustable gain from 103 to 1011 V/W and thus allows the measurement over a wide dynamic range from ca. 100 fW up to 2 mW optical input power. Its high sensitivity is achieved by a low noise design resulting in a noise equivalent power (NEP) of minimum 6 fW/√Hz. Many additional features like switchable signal filters, an offset adjustment and the capability of manual and opto-isolated remote control by a PC make the OE-200 the most versatile photoreceiver in its class.

  • FEMTO: 200 MHz Variable Gain Photoreceiver Series OE-300

    FEMTO: 200 MHz Variable Gain Photoreceiver Series OE-300

    The FemtoOE-300 photoreceiver consists of a premium quality photodiode followed by a high-end, variable gain transimpedance amplifier. The low noise performance (NEP) is outstanding and sets a benchmark for wideband photoreceivers particularly in the high and mid-range gain settings. The relatively large sized detectors make optical alignment easy and also ensure a very high coupling efficiency when using the Si models together with the optionally available fiber optic adapters PRA-FC/SMA.

  • FEMTO: Balanced photoreceivers up to 500 MHz HBPR

    FEMTO: Balanced photoreceivers up to 500 MHz HBPR

    With the completely newly developed HBPR photoreceiver platform, FEMTOhas raised the bar in the field of balanced photoreceivers to a new level.

    Two photodiodes connected in anti-parallel subtract the two input signals and feed the difference to a subsequent low-noise transimpedance amplifier. The extraordinarily high common mode rejection, the low input noise and bandwidths up to 500 MHz set new standards and enable highly sensitive signal acquisition.

  • FEMTO: New Photodetector with InGaAs photodiode and new GHz amplifier extend the product range

    FEMTO: New Photodetector with InGaAs photodiode and new GHz amplifier extend the product range

    FEMTO's new HCA-S-20M-IN photodetector fits perfectly into the existing product range between the LCA-S-400K and HCA-S-200M thanks to its 20 MHz bandwidth.

  • FEMTO: Is it also available in black? Black Silicon Photo Receivers now available

    FEMTO: Is it also available in black? Black Silicon Photo Receivers now available

    With the LCA-S-400K-BSI, FEMTO offers its first photodetector featuring a 2 × 2 mm² black silicon photodiode. Black silicon photodiodes exhibit near-ideal light sensitivity in the wavelength range from 200 nm to 950 nm, with a quantum efficiency of 90 % or higher across most of the usable optical spectrum.

  • FEMTO: Balanced photoreceivers / photodetectors up to 500 kHz

    FEMTO: Balanced photoreceivers / photodetectors up to 500 kHz

    With the new OE-200-BPR, FEMTO is expanding its range of balanced photoreceivers to include bandwidths from DC to 500 kHz and gains up to 1011 V/W.

  • FEMTO: Two new models complete their portfolio of 20 MHz Silicon photoreceivers

    FEMTO: Two new models complete their portfolio of 20 MHz Silicon photoreceivers

    FEMTO are pleased to introduce two new products: the HCA-S-20M-SI-FST and the HCA-S-20M-BSI-FST. These two models complete their portfolio of 20 MHz photoreceivers — a series launched a few months ago with the HCA-S-20M-IN-FST.

Detection