VIGO manufacture exceptionally high quality III-V epitaxial structures for use in sophisticated electronics such as lasers, photodetectors, transistors, photovoltaic cells and other devices. As one of the few companies on the market, we offer a broad range of high quality epi-wafers, which can be produced both in large volumes as well as in small test batches.

GAAS BASED PRODUCTS

AlGaAs/GaAs

  • QW edge emitting lasers

  • VCSELs

  • FETs, HEMTs, Schottky diodes

  • varactors

GaAsP/GaAs

  • strained QW edge emitting lasers

InGaAsP/GaAs

  • QW lasers 808nm

InGaAs/AlGaAs/GaAs

  • strained QW lasers

InAs/GaAs

  • QD lasers

AlGaAs/GaAs

  • passive waveguides

Manufactured to specification

INP BASED PRODUCTS

InGaAsP/InP

  • strained or matched QW edge emitting

    lasers and SOAs 1300 - 1600nm

InGaAs/InP

  • QW edge emitting lasers

InGaAsP/InP

  • VCSEL structures

InAlGaAs/InP

  • edge emitting and VCSEL structures

InGaAsP/InP

  • passive devices

InGaAs

  • photodetectors

InAlAs/InGaAs/InP

  • HEMTs

Manufactured to specification

VCSEL Epi-Structure

VCSEL is a semiconductor laser diode comprised of epitaxial layers grown on n-type GaAs or InP substrates by molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). The VCSEL structure consists of Fabry-Perot cavity (resonator) including an active region with several quantum wells, where light is generated, and top and bottom DBRs (Distributed Bragg Reflector). DBR is composed of stack of semiconductor layers (each with a thickness of a quarter of the laser wavelength) that reflect a particular range of light wavelengths. The emitted light leaves the device in a direction perpendicular to its surface. Learn more.

InGaAs Wafers

The so-called InGaAs material refers to a complete epitaxial stack composed of a variety of layers, with InGaAs forming the key part – the absorption – and being responsible for the material’s optical properties. The InGaAs layer itself is a III-V semiconductor that belongs to the family of In(x)Ga(1-x)As(y)P(1-y). For binary GaAs, InP, GaP, or InAs, the x and y are set to 0 or 1. In quaternary InGaAsP and ternary InGaAs a variety of x and y values are possible, and each combination will tune the semiconductor to different applications. Learn more.

World class R&D expertise

We offer extensive research and development services. Whether you are at the concept stage of your product design, need innovative upgrades to your existing products or seek out-of-the-box solutions our R&D capabilities can help you seize new opportunities, bring your operation to the highest level of performance and add value to your investment. We also provide our clients with technological support in carrying out R&D projects and propose new methods and approaches for producing highly successful epitaxial structures.